onsemi MCR106-6
Sensitive Gate Silicon Controlled Rectifiers
FEATURES
● Glass-Passivated Surface for Reliability and Uniformity● Power Rated at Economical Prices
● Practical Level Triggering and Holding Characteristics
● Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability
● Pb−Free Packages are Available*
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) VDRM, V (TJ = −40 to 110°C, Sine Wave 50 to 60 VRRM Hz, RGK = 1 kW) MCR106−6 400 MCR106−8 600 On-State RMS Current, (TC = 93°C) (180° Conduction Angles) IT(RMS) 4.0 A Average On−State Current, (180° Conduction Angles; TC = 93°C) IT(AV) 2.55 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) Circuit Fusing Considerations, (t = 8.3 ms) ITSM I2t 25 A 2.6 A2s Forward Peak Gate Power, (TC = 93°C, Pulse Width v 1.0 ms) PGM 0.5 W Forward Average Gate Power, (TC = 93°C, t = 8.3 ms) PG(AV) 0.1 W Forward Peak Gate Current, (TC = 93°C, Pulse Width v 1.0 ms) IGM 0...