onsemi MCR12D
Silicon Controlled Rectifiers
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12D MCR12M MCR12N On-State RMS Current (180° Conduction Angles; TC = 80°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.33 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 12 100 A A TO–220AB CASE 221A STYLE 3 Value Unit Volts SCRs 12 AMPERES RMS 400 thru 800 VOLTS G A K 4 1 2 3 I2t PGM PG(AV) IGM TJ Tstg 41 5.0 0.5 2.0 – 40 to +125 – 40 to +150 A2sec Watts Watts A °C °C PIN ASSIGNMENT 1 2 3 4 Cathode Anode Gate Anode ORDERING INFORMATION Device MCR12D MCR12M MCR12N Package TO220AB TO220AB TO220AB Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail (1) VDRM and VRRM for all types can be applied on a continuous basis.