onsemi MCR16N
Reverse Blocking Thyristors
| Part No. | MCR16N |
|---|---|
| Datasheet | MCR16N Download |
| Manufacturer |  onsemi |
| Description | Reverse Blocking Thyristors |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR16N On-State RMS Current (180° Conduction Angles; TC = 80°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Symbol VDRM, VRRM 800 IT(RMS) ITSM 16 Value Unit Volts I2t Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range w w .D w TJ PGM t a S a 160 106 5.0 0.5 2.0 e h A A A °C °C t e U 4 A .c 2 m o G K 4 1 3 A2sec Watts TO–220AB CASE 221A STYLE 3 PIN ASSIGNMENT Watts 1 2 3 4 Cathode Anode Gate Anode PG(AV) IGM – 40 to +125 – 40 to +150 Tstg ORDERING INFORMATION Device MCR16N Package TO220AB Shipping (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode.
