onsemi MJE13005G
NPN Silicon Power Transistors
| Part No. | MJE13005G |
|---|---|
| Datasheet | MJE13005G Download |
| Manufacturer |  onsemi |
| Description | NPN Silicon Power Transistors |
| Buy | Stock & Price |
FEATURES
● VCEO(sus) 400 V● Reverse Bias SOA with Inductive Loads @ TC = 100_C
● Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A, 100_C is 180 ns (Typ)
● 700 V Blocking Capability
● SOA and Switching
APPLICATIONS
Information● These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) Base Current − Continuous − Peak (Note 1) Emitter Current − Continuous − Peak (Note 1) Total Device Dissipation @ TA = 25_C Derate above 25°C Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD Value 400 700 9 4 8 2 4 6 12 2 0.016 Unit Vdc Vdc Vdc Adc Adc Adc W W/_C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 75 0.6 −65 to +150 W W/_C _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Thermal Resistance, Junction−to−Case RqJC 1.67...
