onsemi MJE15030
Complementary Silicon Plastic Power Transistor
FEATURES
● High Current Gain − Bandwidth Product● TO−220 Compact Package
● These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit Collector−Emitter Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G VCEO Vdc 120 150 Collector−Base Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G VCB Vdc 120 150 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25_C Derate above 25C VEB 5.0 Vdc IC 8.0 Adc ICM 16 Adc IB 2.0 Adc PD 50 W 0.40 W/_C Total Device Dissipation @ TA = 25_C Derate above 25C PD 2.0 W 0.016 W/_C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 _C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Symbol Max Thermal Resistance, Junction−to−Case RqJC 2.5...