onsemi MJE15034G
Complementary Silicon Plastic Power Transistors
FEATURES
● High Current Gain − Bandwidth Product● TO−220 Compact Package
● Epoxy meets UL 94 V−0 @ 0.125 in
● These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Symbol VCEO VCB VEB IC ICM IB PD Value 350 350 5.0 4.0 8.0 1.0 50 0.40 Unit Vdc Vdc Vdc Adc Adc Adc W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 W 0.016 W/_C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Case RqJC 2.5...