onsemi MMBD1205
Small Signal Diodes
FEATURES
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 CASE 318−08 MARKING DIAGRAMABSOLUTE MAXIMUM RATINGS
(Note 2, Note 3) Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non−Repetitive Peak Pulse Width = 1.0 A Forward Surge 1.0 s Current Pulse Width = 2.0 1.0 ms TSTG Storage Temperature Range −55 to + 150 C TJ Operating Junction Temperature 150 C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. These ratings are based on a maximum junction temperature of 150C. 3. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS Values are at TA = 25C unless otherwise noted.