MMBFJ113 Datasheet PDF

FEATURES

● This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers
● Sourced from Process 51
● Source & Drain are Interchangeable
● These are Pb−Free Devices

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted) (Note 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 35 V −35 V 50 mA −55 to 150 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max Symbol PD Parameter MMBFJ111 / J111 / J...