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MMBT2132T1 Datasheet PDF

onsemi MMBT2132T1

General Purpose Transistors

MMBT2132T1 Specifications

  • Package : SC
  • Mount Type : Surface Mount
  • Polarity : NPN
  • Max Collector Current : 700mA
  • Terminals : 6
  • Collector Base Voltage : 40V
  • Collector Emitter Voltage : 30V
  • Emitter Base Voltage : 5V
  • Max Power Dissipation : 342mW
  • Power Dissipation : 665mW
  • Max Operating Temp : 150°C
  • Min Operating Temp : -55°C
Source: Octopart
Part No. MMBT2132T1
Datasheet MMBT2132T1 Download
Manufacturer
onsemi
Description General Purpose Transistors
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MMBT2132T1 datasheet page 1 preview

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD RqJA PD PD RqJA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 – 55 to +150 Unit V V V mA mA mW mW °C/W mW mW °C/W °C MMBT2132T1 MMBT2132T3 0.7 AMPERES 30 VOLTS — V(BR)CEO 342 mW 6 5 4 1 2 3 CASE 318 F– 02, STYLE 2 SC–59 — 6 Lead COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3 NPN Symbol Min Typ Max Unit

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Base Breakdown Voltage (IC = 100 mAdc) Collector – Emitter Breakdown Voltage (IC = 10 mAdc) Emitter–Base Breakd...
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