onsemi MMBT2222AL
General Purpose Transistors
FEATURES
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP CapableMAXIMUM RATINGS
Rating Symbol Value Unit Collector −Emitter Voltage VCEO Vdc MMBT2222L 30 MMBT2222AL, SMMBT2222AL 40 Collector −Base Voltage VCBO Vdc MMBT2222L 60 MMBT2222AL, SMMBT2222AL 75 Emitter −Base Voltage VEBO Vdc MMBT2222L 5.0 MMBT2222AL, SMMBT2222AL 6.0 Collector Current − Continuous Collector Current − Peak (Note 3) THERMAL CHARACTERISTICS IC 600 mAdc ICM 1100 mAdc Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.