onsemi MMBT2222AWT1G
General Purpose NPN Silicon Transistor
FEATURES
● AEC−Q101 Qualified and PPAP Capable● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC 40 Vdc 75 Vdc 6.0 Vdc 600 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board TA = 25C PD 150 mW Thermal Resistance, Junction−to−Ambient RqJA 280 C/W Junction and Storage Temperature TJ, Tstg −55 to +150 C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET SC−70 CASE 419 STYLE 3 COLLECTOR 3 1 BASE 2 EMITTER MARKING DIAGRAM P1 MG G 1 P1 = Specific Device Code M = Date Code G = Pb−Free Pa...