onsemi MMBTA56L
PNP Silicon Driver Transistors
| Part No. | MMBTA56L |
|---|---|
| Datasheet | MMBTA56L Download |
| Manufacturer |  onsemi |
| Description | PNP Silicon Driver Transistors |
| Buy | Stock & Price |
FEATURES
● S Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DATA SHEET SOT−23 CASE 318 STYLE 6 COLLECTOR 3 1 BASE 2 EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit Collector −Emitter Voltage MMBTA55 MMBTA56, SMMBTA56 VCEO Vdc −60 −80 Collector −Base Voltage MMBTA55 MMBTA56, SMMBTA56 VCBO Vdc −60 −80 Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VEBO IC −4.0 −500 Vdc mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
