onsemi MMBTA63LT1G
Darlington Transistors
FEATURES
● AEC−Q101 Qualified and PPAP Capable● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements Compliant*● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCES VCBO VEBO IC Value −30 −30 −10 −500 Unit Vdc Vdc Vdc mAdc SOT−23 (TO−236) CASE 318 STYLE 6 COLLECTOR 3 BASE 1 EMITTER 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 Unit mW mW/C C/W 1 2x = Device Code x = U for MMBTA63LT1G x = V for MMBTA64LT1G SMMBTA64LT1G = Date Code* = Pb−Free Package 2x M G G RqJA PD 300 2.4 RqJA TJ, Tstg...