onsemi MMDF3N06VL
Power MOSFET
| Part No. | MMDF3N06VL |
|---|---|
| Datasheet | MMDF3N06VL Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● On−resistance Area Product about One−half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology● Faster Switching than E−FETt Predecessors
● Avalanche Energy Specified
● IDSS and VDS(on) Specified at Elevated Temperature
● Static Parameters are the Same for both TMOS V and TMOS E−FET
● Miniature SO−8 Surface Mount Package − Saves Board Space
● Mounting Information for SO−8 Package Provided VDSS 60 V RDS(ON) TYP 130 mΩ ID MAX 3.0 A N−Channel D G S
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage, (RGS = 1 MΩ) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) VDSS VDGR VGS ID ID IDM PD 60 Vdc 60 Vdc ± 15 Vdc 3.3 Adc 0.7 10 Apk 2.0 W Operating and Storage Temperature Range TJ, Tstg −55 to °C 150 Single Pulse Drain−to−Source Avalanche Energy...
