onsemi MMSF10N03Z
Power MOSFET
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C (Note 1) Drain Current − Continuous @ TA = 70°C (Note 1) Drain Current − Pulsed Drain Current (Note 3) Total Power Dissipation @ TA = 25°C (Note 1) Linear Derating Factor @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Linear Derating Factor @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 W) Symbol VDSS VDGR VGS ID ID IDM PD PD TJ, Tstg EAS Max 30 30 ± 20 10 7.7 50 2.5 20 1.6 12 − 55 to 150 1000 Unit Vdc Vdc Vdc Adc Watts mW/°C Watts mW/°C °C mJ THERMAL RESISTANCE Parameter Symbol Typ Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) RqJA − − 1. When mounted on 1″ square FR4 or G−10 board (VGS = 10 V, @ 10 seconds). 2. When mounted on minimum recommended FR4 or G−10 board (VGS = 10 V, @ Steady State).