onsemi MMSF1308
Power MOSFET
| Part No. | MMSF1308 |
|---|---|
| Datasheet | MMSF1308 Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Parameter Symbol Max Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous Continuous Drain Current @ TA = 25°C (Note 1.) Pulsed Drain Current (Note 2.) Total Power Dissipation @ TA = 25°C (Note 1.) VDSS VDGR VGS ID IDM PD 30 30 ± 20 7.0 50 2.5 Operating and Storage Temperature Range TJ, Tstg − 55 to 150 Unit Vdc Vdc Vdc Adc W °C THERMAL RESISTANCE Junction−to−Ambient (Note 1.) RθJA 50 °C/W 1. When mounted on 1″ square FR−4 or G−10 board (VGS = 10 V, @ 10 Seconds) 2. Repetitive rating; pulse width limited by maximum junction temperature. 7 AMPERES 30 VOLTS RDS(on) = 30 mW N−Channel D G S MARKING DIAGRAM SO−8 8 CASE 751 STYLE 12 1 S1308 LYWW L = Location Code Y = Year WW = Work Week PIN ASSIGNMENT Source Source Source Gate 18 27 36 45 Top View Drain Drain Drain Drain ORDERING INFORMATION Device Package Shipping MMSF1308R2 SO−8 2500 Tape & Reel Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev.
