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MMSF4P01HD Datasheet PDF

onsemi MMSF4P01HD

Power MOSFET

Part No. MMSF4P01HD
Datasheet MMSF4P01HD Download
Manufacturer
onsemi
Description Power MOSFET
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MMSF4P01HD datasheet page 1 preview

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted) (Note 1.) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 12 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 12 Vdc Gate−to−Source Voltage − Continuous VGS ± 8.0 Vdc Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 µs) ID ID IDM 5.1 Adc 3.3 26 Apk Total Power Dissipation @ TA = 25°C (Note 2.) PD 2.5 Watts Operating and Storage Temperature Range − 55 to 150 °C Thermal Resistance − Junction to Ambient (Note 2.) RθJA 50 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 1. Negative sign for P−Channel device omitted for clarity. 2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. 4 AMPERES 12 VOLTS RDS(on) = 80 mW P−Channel D G S MARKING DIAGRAM SO−8 8 CASE 751 STYLE 13 1 S4P01 LYWW L = Location Code Y = Year WW = Work Week PIN ASSIGNMENT N−C Source Source Gate 18 27 36 45 Top View Drain...
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