onsemi MMSF7P03HD
Power MOSFET
| Part No. | MMSF7P03HD |
|---|---|
| Datasheet | MMSF7P03HD Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low RDS(on) Provides Higher Efficiency and Extends Battery Life● Logic Level Gate Drive − Can Be Driven by Logic ICs
● Miniature SO−8 Surface Mount Package − Saves Board Space
● Diode Is Characterized for Use In Bridge Circuits
● Diode Exhibits High Speed, With Soft Recovery
● IDSS Specified at Elevated Temperature
● Mounting Information for SO−8 Package Provided
● Pb−Free Package is Available
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Gate−to−Source Voltage Continuous VGS ± 20 Vdc Drain Current Continuous @ TA = 25°C ID Single Pulse (tp ≤ 10 ms) IDM 7.0 Adc 50 Apk Source Current − Continuous @ TA = 25°C IS 2.3 Adc Total Power Dissipation @ TA = 25°C (Note 1) PD 2.5 W Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Pulse Drain−to−Source Avalanche EAS Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 W) 500 mJ Thermal Resistance, Junction−to−Ambient RqJA 50 °C/W Maximum Temperature for Soldering T 260 °C Maximum ratings are those values beyond which device damage can occur.
