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MPS2907A Datasheet PDF

onsemi MPS2907A

General Purpose Transistors

Part No. MPS2907A
Datasheet MPS2907A Download
Manufacturer
onsemi
Description General Purpose Transistors
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MPS2907A datasheet page 1 preview

FEATURES

● These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value −60 −60 −5.0 −600 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DEVICE MARKING Device MPS2907AG MPS2907ARLG MPS2907ARLRAG MPS2907ARLRPG Line 1 MPS MPS2 MPS MPS Lin...
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