onsemi MPS751
Amplifier Transistors
FEATURES
● These are Pb−Free Devices*MAXIMUM RATINGS
Rating Symbol Collector −Emitter Voltage MPS650; MPS750 MPS651; MPS751 VCE Value 40 60 Unit Vdc Collector −Base Voltage VCB Vdc MPS650; MPS750 60 MPS651; MPS751 80 Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C VEB 5.0 Vdc IC 2.0 Adc PD 625 mW 5.0 mW/°C Total Power Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient VCE 200 °C/W Thermal Resistance, Junction−to−Case VCB 83.3 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. COLLECTOR 3 2 BASE NPN 1 EMITTER COLLECTOR 3...