onsemi N08L63W2A
The N08L63W2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.| Part No. | N08L63W2A |
|---|---|
| Datasheet | N08L63W2A Download |
| Manufacturer |  onsemi |
| Description | 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit |
| Buy | Stock & Price |
FEATURES
● Single Wide Power Supply Range 2.3 to 3.6 Volts● Very low standby current 4.0µA at 3.0V (Typical)
● Very low operating current 2.0mA at 3.0V and 1µs(Typical)
● Very low Page Mode operating current 1.0mA at 3.0V and 1µs (Typical)
● Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion
● Low voltage data retention Vcc = 1.8V
● Very fast output enable access time 25ns OE access time
● Very fast Page Mode access time tAAP = 25ns
● Automatic power down to standby mode
● TTL compatible three-state output driver Product Family Part Number N08L63W2AB N08L63W2AB2 Package Type 48 - BGA 48 - BGA Green Operating Temperature Power Supply (Vcc) Speed Standby Operating Current (ISB), Current (Icc), Typical Typical 4 µA 2 mA @ 1MHz 70ns@2.7V -40oC to +85oC 2.3V - 3.6V 85ns @ 2.3V Pin Configuration 1 A B C D E F G H LB I/O8 I/O9 VSS VCC Pin Descriptions 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC 2 OE UB I/O10 I/O1...
