onsemi NCP58921
The NCP58921 integrates a high−performance, high frequency, driver utilizing state−of−the−art silicon technology and a 650 V, 50 mW Gallium−Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure. The powerful combination of the Si driver and power GaN HEMT switch provides superior performance compared to monolithic GaN power modules. The NCP58921 integrated implementation significantly reduces circuit and package parasitics while enables more compact design.| Part No. | NCP58921 |
|---|---|
| Datasheet | NCP58921 Download |
| Manufacturer |  onsemi |
| Description | GaN Power Switch |
| Buy | Stock & Price |
FEATURES
● 650 V 50 mW GaN HEMT with Integrated Driver● 30 ns Typical Driver Propagation Delay
● 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
● 2.75 mm Creepage Distance for Maximum Reliability
● Driver Capability Adjust Enables EMI Optimization under Hard Switching
● 6.0 V Driver Clamp Voltage Regulator
● TTL Compatible Schmitt Trigger and Rail−to−rail PWM Input
● UVLO Protections for VDD and VDDL Supplies
● Up to 200 V/ns dV/dt Slew Rate Transient Immunity
● 20 V Maximum VDD Ratings
● +5 V LDO Output to Supply Digital Insulators, Current up to 20 mA
● Pb−Free, Halogen Free and RoHS Compliant Typical
APPLICATIONS
● Power Conversion● High Power Density Power Supplies
● All Double−ended Topologies: Half−bridges, Full−bridge, LLC
● Active Clamp Flyback
● High−Voltage Synchronous Buck Converter
● High−Voltage Synchronous Boost Converter
● Two−Switch Forward Converter
● Two−Switch Flyback Converter
● Synchronous PFC Stage
● Totem Pole PFC MARKING DIAGRAM 58921 AWLYWW 58921 = Spe...
