onsemi NDD01N60
N-Channel Power MOSFET
| Part No. | NDD01N60 |
|---|---|
| Datasheet | NDD01N60 Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 100% Avalanche Tested● These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (Note 1) Continuous Drain Current RqJC Steady State, TC = 100°C (Note 1) Pulsed Drain Current, tp = 10 ms Power Dissipation – RqJC Steady State, TC = 25°C Gate−to−Source Voltage Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.0 A) Peak Diode Recovery (Note 2) Source Current (Body Diode) Lead Temperature for Soldering Leads Operating Junction and Storage Temperature Symbol VDSS ID ID IDM PD VGS EAS dv/dt IS TL TJ, TSTG 1.5 260 −55 to +150 1.5 1.0 6.0 46 ±30 13 4.5 0.4 NDD 600 0.4 0.25 1.5 2.5 NDT Unit V A A A W V mJ V/ns A °C °C 4 1 2 3 4 V(BR)DSS 600 V RDS(ON) MAX 8.5 W @ 10 V N−Channel MOSFET D (2) G (1) S (3) MARKING DIAGRAMS 4 Drain DPAK CASE 369C STYLE 2 2 1 Drain 3 Gate Source 4 Drain YWW 01 N60G 1 2 3 Gate Drain Source Drain 4 AYW 01N60G G 1 2 3 Gate Drain Source Stresses exceedingMAXIMUM RATINGS
may damage the device.
