NDD02N60Z Datasheet PDF

FEATURES

● Low ON Resistance
● Low Gate Charge
● ESD Diode−Protected Gate
● 100% Avalanche Tested
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise noted) Rating Symbol NDF NDD Unit Drain−to−Source Voltage Continuous (Note 1) Drain Current RqJC VDSS ID 600 2.4 2.2 V A Continuous TA = 100°C Drain Current (Note 1) RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 2.4 A ESD (HBM) (JESD 22−A114) ID IDM PD VGS EAS Vesd 1.6 1.4 A 10 24 ±30 120 9 57 A W V mJ 2500 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 17) Peak Diode Recovery (Note 2) VISO 4500 dv/dt 4.5 V V/ns Continuous Source Current (Body Diode) IS 2.4 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.