onsemi NDD03N50Z
N-Channel Power MOSFET
| Part No. | NDD03N50Z |
|---|---|
| Datasheet | NDD03N50Z Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON Resistance● Low Gate Charge
● ESD Diode−Protected Gate
● 100% Avalanche Tested
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 2.6 A ESD (HBM) (JESD22−A114) Peak Diode Recovery VDSS ID ID IDM PD VGS EAS Vesd dv/dt 500 V 2.6 A 1.7 A 10 A 58 W ±30 V 120 mJ 2000 4.5 (Note 1) V V/ns Continuous Source Current (Body Diode) IS 2.6 A Maximum Temperature for Soldering TL Leads 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
