NDD04N60Z Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise noted) Parameter Symbol NDF NDD Unit Drain−to−Source Voltage VDSS 600 V Continuous Drain Current RqJC (Note 1) ID 4.8 4.1 A Continuous Drain Current RqJC, TA = 100°C (Note 1) ID 3.0 2.6 A Pulsed Drain Current, IDM VGS @ 10V Power Dissipation RqJC PD Gate−to−Source Voltage VGS Single Pulse Avalanche Energy, ID = 4.0 EAS A 20 20 A 30 83 W ±30 V 120 mJ ESD (HBM) (JESD22−A114) Vesd 3000 V RMS Isolation Voltage VISO 4500 − V (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 15) Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 4.0 A Maximum Temperature for Soldering TL Leads 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2.