onsemi NDDL01N60Z
N-Channel Power MOSFET
| Part No. | NDDL01N60Z |
|---|---|
| Datasheet | NDDL01N60Z Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 100% Avalanche Tested● Gate Charge Minimized
● Zener−protected
● These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Steady State, TC = 25°C (Note 1) Continuous Drain Current Steady State, TC = 100°C (Note 1) Power Dissipation Steady State, TC = 25°C Pulsed Drain Current, tp = 10 ms Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (ID = 0.8 A) Peak Diode Recovery (Note 2) VDSS VGS ID ID PD IDM IS EAS dv/dt 600 ±30 0.8 0.25 V V A 0.5 0.15 A 26 2 W 3.4 2.5 1.7 12 A A mJ 4.5 V/ns Lead Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
