onsemi NDF04N62Z
N-Channel Power MOSFET
| Part No. | NDF04N62Z |
|---|---|
| Datasheet | NDF04N62Z Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON Resistance● Low Gate Charge
● ESD Diode−Protected Gate
● 100% Avalanche Tested
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Parameter Symbol NDF NDD Unit Drain−to−Source Voltage Continuous Drain Current RqJC VDSS 620 V ID 4.4 4.1 A (Note 2) Continuous Drain Current RqJC, TA = 100°C ID 2.8 2.6 A (Note 2) Pulsed Drain Current, VGS @ 10V Power Dissipation RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 4.0 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) IDM 18 16 A (Note 2) PD 28 83 W VGS ±30 V EAS 120 mJ Vesd 3000 V VISO 4500 − V Peak Diode Recovery dv/dt 4.5 (Note 3) V/ns Continuous Source Current (Body Diode) IS 4.0 A Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s TL TPKG 300 °C 260 Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceedingMAXIMUM RATINGS
may damage the device.
