NDF06N60Z Datasheet PDF

FEATURES

● Low ON Resistance
● Low Gate Charge
● ESD Diode−Protected Gate
● 100% Avalanche Tested
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Continuous Drain Current, RqJC (Note 1) Continuous Drain Current TA = 100°C, RqJC (Note 1) VDSS 600 V ID 7.1 A ID 4.5 A Pulsed Drain Current, VGS @ 10 V IDM 28 A Power Dissipation, RqJC PD Gate−to−Source Voltage VGS Single Pulse Avalanche Energy, L = 6.3 mH, EAS ID = 6.0 A 35 W ±30 V 113 mJ ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Vesd 3000 V VISO 4500 V Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 6.0 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C 150 Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.