onsemi NDF06N62Z
N-Channel Power MOSFET
| Part No. | NDF06N62Z |
|---|---|
| Datasheet | NDF06N62Z Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON Resistance● Low Gate Charge
● ESD Diode−Protected Gate
● 100% Avalanche Tested
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Rating Symbol NDF06N62Z Unit Drain−to−Source Voltage Continuous Drain Current RqJC (Note 1) Continuous Drain Current RqJC, TA = 100°C (Note 1) Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 6.0 A VDSS ID ID IDM PD VGS EAS 620 V 6.0 A 3.8 A 20 A 31 W ±30 V 113 mJ ESD (HBM) (JESD 22−A114) Vesd 3000 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery (Note 2) VISO 4500 V dv/dt 4.5 V/ns Continuous Source Current (Body Diode) IS Maximum Temperature for TL Soldering Leads 6.0 A 260 °C Operating Junction and Storage Temperature Range TJ, Tstg − 55 to 150 °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
