NDF08N50Z Datasheet PDF

FEATURES

● Low ON Resistance
● Low Gate Charge
● ESD Diode−Protected Gate
● 100% Avalanche Tested
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise noted) Rating Symbol NDF08N50Z Unit Drain−to−Source Voltage Continuous Drain Current RqJC (Note 1) Continuous Drain Current RqJC TA = 100°C (Note 1) Pulsed Drain Current, VGS @ 10 V Power Dissipation Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 7.5 A VDSS ID ID IDM PD VGS EAS 500 V 8.5 A 5.4 A 34 A 35 W ±30 V 190 mJ ESD (HBM) (JESD 22−A114) Vesd 3500 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery (Note 2) VISO 4500 V dV/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 7.5 A Maximum Temperature for Soldering TL Leads 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.