onsemi NDF10N62Z
N-Channel Power MOSFET
| Part No. | NDF10N62Z |
|---|---|
| Datasheet | NDF10N62Z Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant VDSS 620 V RDS(ON) (TYP) @ 5 A 0.65 Ω
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 36 ±30 300 3900 NDF10N62Z NDP10N62Z Unit V A A G (1) 36 (Note 2) 125 A W V mJ V V NDF10N62ZG or NDP10N62ZG AYWW Gate TO−220AB CASE 221A STYLE 5 Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package Source S (3) N−Ch...
