onsemi NDF11N50Z
N-Channel Power MOSFET
| Part No. | NDF11N50Z |
|---|---|
| Datasheet | NDF11N50Z Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10.5 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 10.5 (Note 2) 6.7 (Note 2) 42 (Note 2) 36 ±30 190 4000 NDF11N50Z NDP11N50Z Unit V 10.5 6.7 42 145 A A A RDS(ON) (MAX) @ 4.5 A 0.52 Ω
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) 500 N−Channel D (2) G (1) W V mJ V V NDF11N50ZG or NDP11N50ZG AYWW Gate TO−220 CASE 221A STYLE 5 Drain A Y WW G = Location Code = Year = Work Week...
