onsemi NDFPD1N150C
the NDFPD1N150C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.| Part No. | NDFPD1N150C |
|---|---|
| Datasheet | NDFPD1N150C Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● On-resistance RDS(on)=100Ω(typ.)● Input Capacitance Ciss=80pF(typ.)
● 10V drive Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VGSS ID IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tch Tstg Tc=25°C TO-220F-3FS Ratings 1500 ±30 0.1 0.2 2.0 20 150 - 55 to +150 Unit V V A A W W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.ELECTRICAL CHARACTERISTICS
at Ta = 25°C Parameter Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capac...
