onsemi NDP04N62Z
N-Channel Power MOSFET
| Part No. | NDP04N62Z |
|---|---|
| Datasheet | NDP04N62Z Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant VDSS 620 V RDS(ON) (TYP) @ 2 A 1.8 Ω
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10V Power Dissipation RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 4.0 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 4.4 (Note 2) 2.8 (Note 2) 18 (Note 2) 28 NDF NDP 620 4.4 2.8 18 96 ±30 120 3000 − − 4.1 2.6 16 83 NDD Unit V A A G (1) A W V mJ V V S (3) N−Channel D (2) 4 4 dv/dt IS TL TPKG 4.5 (Note 3) 4.0 300 260...
