onsemi NDP06N60Z
Single N-Channel TO-220FP MOSFET
FEATURES
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● Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 600 V RDS(ON) (TYP) @ 3 A 0.98 Ω
APPLICATIONS
● Adapter (Notebook, Printer, Gaming)● LCD Panel Power
● Lighting Ballasts
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, L = 6.3 mH, ID = 6.0 A ESD (HBM) (JESD 22−114−B) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS 31 ±30 113 NDF06N60Z NDP06N60Z Unit V A A A 113 W V mJ 600 (Note 1) 6.0 (Note 2) 3.8 (Note 2) 20 (Note 2) N−Channel D (2) G (...