onsemi NDP06N62Z
N-Channel Power MOSFET
| Part No. | NDP06N62Z |
|---|---|
| Datasheet | NDP06N62Z Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant VDSS 620 V Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 6.0 A ESD (HBM) (JESD 22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 31 ±30 113 3000 − NDF06N62Z NDP06N62Z Unit V A A A 113 W V mJ V V RDS(ON) (TYP) @ 3 A 0.98 Ω
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) 620 6.0 (Note 1) 3.8 (Note 1) 20 (Note 1) N−Channel D (2) G (1) S (3) TO−220FP CASE 221D STYLE 1 MARKING DIAGRAM dv/dt IS TL TJ, Tstg 4.5 (Note 2) 6.0 260 − 55 to 150 V/ns A °C °C TO−220AB CASE 221A STYLE 5 A Y WW G NDF06N62ZG or NDP06N62ZG AYWW Gate Source Stresses exceedingMAXIMUM RATINGS
may damage the device.
