NDP08N50Z Datasheet PDF

FEATURES

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● Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V RDS(ON) (TYP) @ 3.6 A 0.69 W

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 7.5 A ESD (HBM) (JESD 22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 NDF08N50Z NDP08N50Z Unit V 7.5 4.7 30 125 30 190 3500 A A A W V mJ V V 500 7.5 (Note 1) 4.7 (Note 1) 30 (Note 1) 31 N−Channel D (2) G (1) TO−220FP CASE 221D STYLE 1 S (3) MARKING DIAGRAM dv/dt IS TL TJ, Tstg 4.5 7.5 260 − 55 to 150 V/ns A °C °C TO−220AB CASE 221A STYLE 5 NDF08N50ZG or NDP08N50ZG AYWW Gate Source Stresses exceeding

MAXIMUM RATINGS

may damage the device.