onsemi NDP10N60Z
N-Channel Power MOSFET
| Part No. | NDP10N60Z |
|---|---|
| Datasheet | NDP10N60Z Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain−to−Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, L = 6.0 mH, ID = 10 A ESD (HBM) (JESD 22−114−B) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS 36 ±30 300 NDF10N60Z NDP10N60Z Unit V A A A 125 W V mJ VDSS 600 V RDS(ON) (TYP) @ 5 A 0.65 Ω
APPLICATIONS
N−Channel D (2)ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) 600 (Note 1)...
