NDSH20120C Datasheet | onsemi

Description Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features - Max Junction Temperature 175C - Avalanche Rated 166 m J - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery / No Forward Recovery - These Devices are Halogen Free/BFR Free and are Ro HS pliant Applications - General Purpose - SMPS, Solar Inverter, UPS - Power Switching Circuits 1 2 TO- 247- 2LD CASE 340DA MARKING DIAGRAM DSH 20120C AYWWZZ DSH20120C A YWW ZZ = Specific Device Code = Assembly Plant Code = Date Code (Year & Week) = Lot...