onsemi NGTB30N60SWG
IGBT
| Part No. | NGTB30N60SWG |
|---|---|
| Datasheet | NGTB30N60SWG Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Low Saturation Voltage using Trench with Fieldstop Technology● Low Switching Loss Reduces System Power Dissipation
● Low Gate Charge
● Soft, Fast Free Wheeling Diode
● These are Pb−Free Devices Typical
APPLICATIONS
● Inverter Welding● UPS Systems
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse limited by TJmax Gate−emitter voltage Power Dissipation @ TC = 25°C @ TC = 100°C Operating junction temperature range VCES 600 V IC A 60 30 ICM 120 A IF A 60 30 IFM 120 A VGE $20 V PD W 189 76 TJ −55 to +150 °C Storage temperature range Lead temperature for soldering, 1/8″ from case for 5 seconds Tstg TSLD −55 to +150 °C 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
