• Part: NGTD23T120F2
  • Description: IGBT Die
  • Manufacturer: onsemi
  • Size: 214.78 KB
Download NGTD23T120F2 Datasheet PDF
onsemi
NGTD23T120F2
Features - Extremely Efficient Trench with Field Stop Technology - Low VCE(sat) Loss Reduces System Power Dissipation Typical Applications - Industrial Motor Drives - Solar Inverters - UPS Systems - Welding MAXIMUM RATINGS Parameter Symbol Value Unit Collector- Emitter Voltage, TJ = 25°C DC Collector Current, limited by TJ(max) (Note 1) Pulsed Collector Current (Note 2) IC, pulse Gate- Emitter Voltage ±20 Maximum Junction Temperature - 55 to +175 °C Short Circuit Withstand Time, VGE = 15 V, VCE = 500V, TJ ≤ 150°C 10 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Depending on thermal properties of assembly. 2. Tpulse limited by Tjmax, 10 ms pulse, VGE = 15 V. MECHANICAL DATA Parameter Die Size Emitter Pad Size Gate Pad Size Die Thickness Value Unit...