onsemi NID9N05CL
Power MOSFET
| Part No. | NID9N05CL |
|---|---|
| Datasheet | NID9N05CL Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
VDSS (Clamped) 52 V RDS(ON) TYP 90 mΩ ID MAX (Limited) 9.0 A Drain (Pins 2, 4)●
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● Diode Clamp Between Gate and Source ESD Protection − HBM 5000 V Active Over−Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance
APPLICATIONS
Gate (Pin 1) RG Overvoltage Protection MPWR● Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 125°C (VDD = 50 V, ID(pk) = 1.5 A, VGS = 10 V, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10...
