onsemi NIF5002NT3
Self-Protected FET
FEATURES
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● Gate Input RG ESD Protection Temperature Limit Current Limit Current Sense
APPLICATIONS
● Lighting● Solenoids
● Small Motors
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) Gate−to−Source Voltage Continuous Drain Current Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TT = 25°C (Note 3) Symbol VDSS VDGR VGS ID PD Value 42 42 "14 1.1 1.7 8.9 −55 to 150 150 Unit V V V 5002N L YM SOT−223 CASE 318E Style 3 GATE Source MARKING DIAGRAM 1 4 DRAIN ONLYM 5002N 2 DRAIN 3 SOURCE (Top View) = Specific Device Code = Location Code = Year, Month Internally Limited W Operating Junction and Storage Temperature Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W) TJ, Tstg EAS °C mJ ORDERING INFORMATION Device NIF5002NT1 NIF5002NT3 Package SOT−223 SOT−223 Shipping† 1000/Tape & Reel 4000/Tape & Reel THER...