onsemi NIF5003N
Self-Protected FET
FEATURES
● Short Circuit Protection/Current Limit● Thermal Shutdown with Automatic Restart
● IDSS Specified at Elevated Temperature
● Avalanche Energy Specified
● Slew Rate Control for Low Noise Switching
● Overvoltage Clamped Protection
● Pb−Free Packages are Available VDSS (Clamped) 42 V RDS(on) TYP 53 mW @ 10 V ID MAX (Limited) 14 A Drain Gate Input Overvoltage Protection RG MPWR ESD Protection Temperature Current Current Limit Limit Sense Source
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage Drain Current Continuous Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 7.0 Apk, L = 9.5 mH, RG = 25 W) Operating and Storage Temperature Range (Note 3) VDSS VGS ID PD RqJC RqJA RqJA EAS 42 Vdc "14 Vdc Internally Limited W 1.25 1.9 °C/W 12 100 65 233 mJ TJ, Tstg −55 to 150 °C Stresses exceedingMAXIMUM RATINGS
may damage the device.