onsemi NIF9N05CL
Protected Power MOSFET
| Part No. | NIF9N05CL |
|---|---|
| Datasheet | NIF9N05CL Download |
| Manufacturer |  onsemi |
| Description | Protected Power MOSFET |
| Buy | Stock & Price |
FEATURES
VDSS (Clamped) 52 V RDS(ON) TYP 107 mW ID MAX 2.6 A●
●
●
●
●
● Diode Clamp Between Gate and Source ESD Protection − HBM 5000 V Active Over−Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance Pb−Free Packages are Available Drain (Pins 2, 4) Gate (Pin 1) RG Overvoltage Protection MPWR
APPLICATIONS
ESD Protection● Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 ms) (Note 1) Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 W) Thermal Resistance, Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from...
