onsemi NIS2161
The NIS/NIV2161 is designed to protect high speed data lines from ESD as well as short to vehicle battery situations. The ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines while the low RDS(on) FET limits distortion on the signal lines. The flow−through style package allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between high speed differential lines such as USB and LVDS protocols.| Part No. | NIS2161 |
|---|---|
| Datasheet | NIS2161 Download |
| Manufacturer |  onsemi |
| Description | ESD Protection |
| Buy | Stock & Price |
FEATURES
● Low Capacitance (0.40 pF Typical, I/O to GND)● Protection for the Following Standards: IEC 61000−4−2 (Level 4) & ISO 10605
● Integrated MOSFETs for Short−to−Battery and Short−to−Ground Protection
● NIV Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical
APPLICATIONS
● Automotive High Speed Signal Pairs● USB 2.0/3.0
● LVDS
● APIX 2/3
ABSOLUTE MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Operating Junction Temperature Range TJ(max) −55 to +150 °C Storage Temperature Range TSTG −55 to +150 °C Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage Lead Temperature Soldering IEC 61000−4−2 Contact (ESD) IEC 61000−4−2 Air (ESD) VGS ±10 V TSLD 260 °C ESD ±8 kV ESD ±15 kV Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
