onsemi NJVMJB44H11
NPN Transistor
FEATURES
SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS MARKING DIAGRAM● Low Collector−Emitter Saturation Voltage −
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● VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V NJV Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available D2PAK CASE 418B STYLE 1 B4xH11G AYWW x A Y WW G = 4 or 5 = Assembly Location = Year = Work Week = Pb−Free PackageMAXIMUM RATINGS
Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Symbol VCEO VEB IC PD Value 80 5 10 20 50 0.4 2.0 0.016 − 55 to 150 Unit Vdc Vdc Adc ORDERING INFORMATION Device MJB44H11G MJB44H11T4G NJVMJB44H11T4G W W/°C W W/°C °C MJB45H11G MJB45H11T4G NJVMJB45H11T4G Package D2PAK (Pb−Free) D2PAK (Pb−Free) D2PAK (Pb−Free) D2PAK (Pb−Free)...