onsemi NJVNJD1718
Power Transistors
| Part No. | NJVNJD1718 |
|---|---|
| Datasheet | NJVNJD1718 Download |
| Manufacturer |  onsemi |
| Description | Power Transistors |
| Buy | Stock & Price |
APPLICATIONS
Designed for high−gain audio amplifier and power switching applications.FEATURES
● Low Collector−Emitter Saturation Voltage● High Switching Speed
● Epoxy Meets UL 94 V−0 @ 0.125 in
● NJV Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCB VCEO VEB IC ICM IB PD −50 Vdc −50 Vdc −5 Vdc −2 Adc −3 Adc −0.4 Adc 15 W 0.1 W/°C Total Device Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.68 W 0.011 W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceedingMAXIMUM RATINGS
may damage the device.
