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NJW0281G Datasheet PDF

onsemi NJW0281G

Complementary NPN Power Bipolar Transistors

Part No. NJW0281G
Datasheet NJW0281G Download
Manufacturer
onsemi
Description Complementary NPN Power Bipolar Transistors
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NJW0281G datasheet page 1 preview

FEATURES

● Exceptional Safe Operating Area
● NPN/PNP Gain Matching within 10% from 50 mA to 3 A
● Excellent Gain Linearity
● High BVCEO
● High Frequency
● These Devices are Pb-Free and are RoHS Compliant Benefits
● Reliable Performance at Higher Powers
● Symmetrical Characteristics in Complementary Configurations
● Accurate Reproduction of Input Signal
● Greater Dynamic Range
● High Amplifier Bandwidth

APPLICATIONS

● High-End Consumer Audio Products  Home Amplifiers  Home Receivers
● Professional Audio Amplifiers  Theater and Stadium Sound Systems  Public Address Systems (PAs)

MAXIMUM RATINGS

Symbol Rating Value Unit VCEO VCBO VEBO VCEX IC ICM IB PD TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous Collector Current - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25 C Operating and Storage Junction Temperature Range 250 250 5.0 250 15 30 1.5 150 − 65 to +150 Vdc Vdc Vdc Vdc Adc Adc Adc Watts C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.
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